Integrated Switcher. IRIS-A6372 Datasheet

IRIS-A6372 Switcher. Datasheet pdf. Equivalent

Part IRIS-A6372
Description Integrated Switcher
Feature IRIS-A6372 Features • Oscillator is provided on the monolithic control with adopting On-ChipTrimming.
Manufacture IRF
Datasheet
Download IRIS-A6372 Datasheet

IRIS-A6372 Features • Oscillator is provided on the monolith IRIS-A6372 Datasheet
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IRIS-A6372
IRIS-A6372
Features
INTEGRATED SWITCHER
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Package Outline
Low start-up circuit current (50uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
8 Lead PDIP
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
Descriptions
IRIS-A6372
900
7.7Ω
230±15%
85 to 264
6
4
IRIS-A6372 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC
fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC
operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply
system reducing external components count and simplifying the circuit designs. (Note). PRC is
abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
STR-A6372
18
27
36
45
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IRIS-A6372
IRIS-A6372
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings
8 1.18
8 1.18
EAS Single pulse avalanche energy *2
8-1
24.9
Vin Input voltage for control part
3-2 35
Vth O.C.P/F.B Pin voltage
4-2 6
PD1 Power dissipation for MOSFET *3 8-1
1.35
Power dissipation for control part
PD2
(Control IC) *4
3-2 0.14
Internal frame temperature
TF in operation
- -20 ~ +125
Top Operating ambient temperature
- -20 ~ +125
Tstg Storage temperature
- -40 ~ +125
Tch Channel temperature
- 150
Units
A
A
mJ
V
V
W
W
Note
Single Pulse
V1-2=0.82V
Ta=-20~+125
Single Pulse
VDD=99V,L=20mH
IL=1.18A
*6
Specified by
Vin×Iin
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V1-2
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
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