2SB1531 Datasheet PDF Download, Matsushita Electric





(PDF) 2SB1531 Datasheet Download

Part Number 2SB1531
Description Transistors
Manufacture Matsushita Electric
Total Page 4 Pages
PDF Download Download 2SB1531 Datasheet PDF

Features: PlehtatMspae:i//nvitwseitwnfaw.onlslceoe /wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnl ntdimiaauansasneibcuoednooteniduinetdnt cilnt.cmlnayactauiupnoe.dnecejstetdepe/ sittnefnyyfanopp/lonleercodemwitatnyigp o fen.ourDisMcaionnttie Power Transist ors 2SB1531 Silicon PNP epitaxial plana r type Darlington Productnnua For pow er amplification Complementary to 2SD23 40 s Features q Optimum for 40W HiFi o utput q High foward current transfer ra tio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector t o emitter voltage Emitter to base volt age Peak collector current Collector current Collector power TC=25°C diss ipation Ta=25°C VCBO VCEO VEBO ICP I C PC –130 –110 –5 –10 –6 50 2.5 Junction temperature Storage tempe rature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 16.2±0.5end 12.5 3.5 Solder Dip 20.0±0.3ce 19.0±0.3 15.0±0.2 4.0±0.1/ 4.0±0.1 15.0±0.5 13.0±0.5 .

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Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2340
s Features
q Optimum for 40W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–110
–5
–10
–6
50
2.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
15.0±0.5
13.0±0.5
10.5±0.5
Unit: mm
4.5±0.2
2.0±0.1
φ3.2±0.1
2.0±0.2
1.1±0.1
1.4±0.3
5.45±0.3
10.9±0.5
0.6±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = –130V, IE = 0
VCE = –110V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –5A
IC = –5A, IB = –5mA
IC = –5A, IB = –5mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –5A, IB1 = –5mA, IB2 = 5mA,
VCC = –50V
min
–110
2000
5000
E
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
0.9 µs
2.5 µs
1.7 µs
*hFE2 Rank classification
Rank
Q
S
P
hFE2 5000 to 15000 7000 to 21000 8000 to 30000
1

           






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