Transistors. 2SB1531 Datasheet

2SB1531 Transistors. Datasheet pdf. Equivalent

Part 2SB1531
Description Transistors
Feature PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuo.
Manufacture Matsushita Electric
Datasheet
Download 2SB1531 Datasheet

PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicns 2SB1531 Datasheet
isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRI 2SB1531 Datasheet
Recommendation Recommendation Datasheet 2SB1531 Datasheet





2SB1531
Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2340
s Features
q Optimum for 40W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–110
–5
–10
–6
50
2.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
15.0±0.5
13.0±0.5
10.5±0.5
Unit: mm
4.5±0.2
2.0±0.1
φ3.2±0.1
2.0±0.2
1.1±0.1
1.4±0.3
5.45±0.3
10.9±0.5
0.6±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = –130V, IE = 0
VCE = –110V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –5A
IC = –5A, IB = –5mA
IC = –5A, IB = –5mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –5A, IB1 = –5mA, IB2 = 5mA,
VCC = –50V
min
–110
2000
5000
E
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
0.9 µs
2.5 µs
1.7 µs
*hFE2 Rank classification
Rank
Q
S
P
hFE2 5000 to 15000 7000 to 21000 8000 to 30000
1



2SB1531
Power Transistors
PC — Ta
80
70
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
60 (3) Without heat sink
(PC=2.5W)
50
40
(1)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–12
TC=25˚C
–10 IB=–5mA
–8 –1mA
– 0.9mA
– 0.8mA
–6 – 0.7mA
– 0.6mA
– 0.5mA
–4 – 0.4mA
– 0.3mA
–2 – 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1531
–100
–30
–10
–3
–1
VCE(sat) — IC
IC/IB=1000
TC=100˚C
25˚C
–25˚C
– 0.3
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
–100
–30
–10
VBE(sat) — IC
IC/IB=1000
–3 TC=–25˚C
–1
100˚C
25˚C
– 0.3
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
hFE — IC
105
VCE=5V
TC=100˚C
25˚C
104
–25˚C
103
102
10
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
100
30
10
3 tstg
1 tf
ton
0.3
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25˚C
0.1
0.03
0.01
0
–4 –8 –12 –16
Collector current IC (A)
Area of safe operation (ASO)
–100
–30
–10 ICP
IC
–3
10ms
Non repetitive pulse
TC=25˚C
t=1ms
–1 DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2





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