Document
¡ Semiconductor MSM51V17805B/BSL
¡ Semiconductor
MSM51V17805B/BSL
E2G0079-17-41
2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM51V17805B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B/BSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V17805B/BSL is available in a 28-pin plastic SOJ or 28-pin plastic TSOP. The MSM51V17805BSL (the self-refresh version) is specially designed for lower-power applications.
FEATURES
• 2,097,152-word ¥ 8-bit configuration • Single 3.3 V power supply, ± 0.3 V tolerance • Input : LVTTL compatible, low input capacitance • Output : LVTTL compatible, 3-state • Refresh : 2048 cycles/32 ms, 2048 cycles/128 ms (SL version) • Fast page mode with EDO, read modify write capability • CAS before RAS refresh, hidden refresh, RAS-only refresh capability • CAS before RAS self-refresh capability (SL version) • Multi-bit test mode capability • Package options: 28-pin 400 mil plastic SOJ (SOJ28-P-400-1.27) (Product : MSM51V17805B/BSL-xxJS) 28-pin 400 mil plastic TSOP (TSOPII28-P-400-1.27-K) (Product : MSM51V17805B/BSL-xxTS-K) xx indicates speed rank.
PRODUCT FAMILY
Family Access Time (Max.) tRAC tAA tCAC tOEA Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 84 ns 104 ns 124 ns 540 mW 468 mW 396 mW 1.8 mW/ 0.72 mW (SL version)
MSM51V17805B/BSL-50 50 ns 25 ns 13 ns 13 ns MSM51V17805B/BSL-60 60 ns 30 ns 15 ns 15 ns MSM51V17805B/BSL-70 70 ns 35 ns 20 ns 20 ns
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MSM51V17805B/BSL
PIN CONFIGURATION (TOP VIEW)
VCC 1
A10R 9
ࣽऀ
28 VSS VCC 1 DQ1 2 27 DQ8 DQ1 2 DQ2 3 DQ3 4 DQ4 5 WE 6 NC 8 DQ2 3 DQ3 4 DQ4 5 WE 6 NC 8 RAS 7 26 DQ7 25 DQ6 24 DQ5 22 OE 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS 23 CAS 21 A9 RAS 7 A10R 9 A0 10 A1 11 A2 12 A3 13 VCC 14 28-Pin Plastic SOJ A0 10 A1 11 A2 12 A3 13 VCC 14 Pin Name A0 - A9, A10R RAS CAS DQ1 - DQ8 OE WE VCC VSS Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (3.3 V) Ground (0 V)
¡ Semiconductor
28 VSS 27 DQ8 26 DQ7 25 DQ6 24 DQ5 23 CAS 22 OE 21 A9 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS
28-Pin Plastic TSOP (K Type)
Note :
The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
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¡ Semiconductor
MSM51V17805B/BSL
BLOCK DIAGRAM
Timing Generator
WE
I/O Controller
OE
8
RAS CAS
Output Buffers
8
DQ1 - DQ8
10
Column Address Buffers Internal Address Counter
10
Column Decoders
8
Input Buffers
8
A0 - A9
10
Refresh Control Clock
Sense Amplifiers
8
I/O Selector
8
A10R
1
Row Row Address 11 DecoBuffers ders
Word Drivers
Memory Cells
VCC
On Chip VBB Generator
VSS
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MSM51V17805B/BSL
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Voltage on Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD * Topr Tstg Rating –0.5 to 4.6 50 1 0 to 70 –55 to 150 Unit V mA W °C °C
*: Ta = 25°C Recommended Operating Conditions
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 3.0 0 2.0 –0.3 Typ. 3.3 0 — — Max. 3.6 0 VCC + 0.3 0.8 (Ta = 0°C to 70°C) Unit V V V V
Capacitance
Parameter Input Capacitance (A0 - A9, A10R) Input Capacitance (RAS, CAS, WE, OE) Output Capacitance (DQ1 - DQ8) Symbol CIN1 CIN2 CI/O Typ. — — —
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz) Max. 5 7 7 Unit pF pF pF
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¡ Semiconductor DC Characteristics
Parameter Output High Voltage Output Low Voltage Input Leakage Current
Symbol
MSM51V17805B/BSL
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Condition MSM51V17805 MSM51V17805 MSM51V17805 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. VOH IOH = –2.0 mA VOL IOL = 2.0 mA 0 V £ VI £ VCC + 0.3 V; ILI All other pins not under test = 0 V DQ disable 0 V £ VO £ VCC RAS, CAS cycling, tRC = Min. RAS, CAS = VIH ICC2 RAS, CAS ≥ VCC –0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tHPC = Min. tRC = 62.5 ms, ICC10 CAS before RAS, tRAS £ 1 ms RAS £ 0.2 V, CAS £ 0.2 V — 300 — 300 — 300 mA 1, 4, 5 — 150 — 130 — 110 mA 1, 3 — 150 — 130 — 110 mA 1, 2 — 5 — 5 — 5 mA 1 — 150 — 130 — 110 mA 1, 2 –10 10 –10 10 –10 10 mA 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 V V
Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) Average Power Supply Current (Battery Backup) Average Power Supply Current (CAS before RAS Self-Refresh)
ILO
–10
10
–10
10
–10
10
mA
ICC1
— — — —
150 2 .