Document
E2G0123-17-61
¡ Semiconductor MSM51V17400D/DSL
¡ Semiconductor
This version: Mar. 1998 MSM51V17400D/DSL
Pr el im in ar y
4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V17400D/DSL is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP. The MSM51V17400DSL (the self-refresh version) is specially designed for lower-power applications.
FEATURES
• 4,194,304-word ¥ 4-bit configuration • Single 3.3 V power supply, ± 0.3 V tolerance • Input : LVTTL compatible, low input capacitance • Output : LVTTL compatible, 3-state • Refresh : 2048 cycles/32 ms, 2048 cycles/128 ms (SL version) • Fast page mode, read modify write capability • CAS before RAS refresh, hidden refresh, RAS-only refresh capability • CAS before RAS self-refresh capability (SL version) • Multi-bit test mode capability • Package options: 26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM51V17400D/DSL-xxSJ) 26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM51V17400D/DSL-xxTS-K) xx indicates speed rank.
PRODUCT FAMILY
Family Access Time (Max.) tRAC tAA tCAC tOEA Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 110 ns 130 ns 360 mW 324 mW 288 mW 1.8 mW/ 0.72 mW (SL version)
MSM51V17400D/DSL-50 50 ns 25 ns 13 ns 13 ns MSM51V17400D/DSL-60 60 ns 30 ns 15 ns 15 ns MSM51V17400D/DSL-70 70 ns 35 ns 20 ns 20 ns
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PIN CONFIGURATION (TOP VIEW)
VCC 1
,
26 VSS VCC 1 26 VSS DQ1 2 WE 4 NC 6 25 DQ4 DQ1 2 WE 4 NC 6 25 DQ4 23 CAS 22 OE DQ2 3 24 DQ3 23 CAS 22 OE 21 A9 DQ2 3 RAS 5 24 DQ3 RAS 5 21 A9 19 A8 A10 8 A0 9 19 A8 A10 8 18 A7 17 A6 16 A5 15 A4 14 VSS A0 9 18 A7 17 A6 16 A5 15 A4 14 VSS A1 10 A2 11 A3 12 VCC 13 28-Pin Plastic SOJ A1 10 A2 11 A3 12 VCC 13 28-Pin Plastic TSOP (K Type) Pin Name A0 - A10 RAS CAS DQ1 - DQ4 OE WE VCC VSS NC Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (3.3 V) Ground (0 V) No Connection
MSM51V17400D/DSL
Note :
The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
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¡ Semiconductor
MSM51V17400D/DSL
BLOCK DIAGRAM
RAS CAS Timing Generator Timing Generator
11
Column Address Buffers Internal Address Counter
11
Column Decoders
Write Clock Generator
WE OE
4
Output Buffers
4 4
A0 - A10
Refresh Control Clock
Sense Amplifiers
4
I/O Selector
4 4
DQ1 - DQ4
Input Buffers
4
11
Row Address Buffers
11
Row Decoders
Word Drivers
Memory Cells
VCC On Chip VBB Generator VSS
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MSM51V17400D/DSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Voltage on Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD* Topr Tstg Rating –0.5 to 4.6 50 1 0 to 70 –55 to 150 Unit V mA W °C °C
*: Ta = 25°C Recommended Operating Conditions
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 3.0 0 2.0 –0.3 Typ. 3.3 0 — — Max. 3.6 0 VCC + 0.3 0.8 (Ta = 0°C to 70°C) Unit V V V V
Capacitance
Parameter Input Capacitance (A0 - A10) Input Capacitance (RAS, CAS, WE, OE) Output Capacitance (DQ1 - DQ4) Symbol CIN1 CIN2 CI/O Typ. — — —
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz) Max. 5 7 7 Unit pF pF pF
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¡ Semiconductor DC Characteristics
Parameter Output High Voltage Output Low Voltage Input Leakage Current
Symbol
MSM51V17400D/DSL
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Condition MSM51V17400 MSM51V17400 MSM51V17400 D/DSL-50 D/DSL-60 D/DSL-70 Unit Note Min. VOH IOH = –2.0 mA VOL IOL = 2.0 mA 0 V £ VI £ VCC + 0.3 V; ILI All other pins not under test = 0 V DQ disable 0 V £ VO £ VCC RAS, CAS cycling, tRC = Min. RAS, CAS = VIH ICC2 RAS, CAS ≥ VCC –0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC = Min. tRC = 62.5 ms, ICC10 CAS before RAS, tRAS £ 1 ms RAS £ 0.2 V, CAS £ 0.2 V — 300 — 300 — 300 mA 1, 4, 5 — 75 — 70 — 65 mA 1, 3 — 100 — 90 — 80 mA 1, 2 — 5 — 5 — 5 mA 1 — 100 — 90 — 80 mA 1, 2 –10 10 –10 10 –10 10 mA 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 V V
Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) Average Power Supply Current (Battery Backup) Average Power Supply Current (CAS before RAS Self-Refresh)
ILO
–10
10
–10
10
–10
10
mA
ICC1
— — — —
.