MSM51V4265E

FEDD51V4265E-01 1 Semiconductor MSM51V4265E DESCRIPTION This version: June 2001 Previous version :  262,144-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM51V4265E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V4265E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V4265E is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. FEATURES ∙ 262,144-word × 16-bit configuration ∙ Single 3.3V power supply, ±0.3V tolerance ∙ Input : LVTTL compatible, low input capacitance ∙ Output : LVTTL compatible, 3-state ∙ Refresh : 512 cycles/8ms ∙ Fast page mode with EDO, read modify write capability ∙ CAS before RAS refresh, hidden refresh, RAS-only refresh capability ∙ Packages 40-pin 400mil plastic SOJ (SOJ40-P-400-1.27) (Product : MSM51V4265E-xxJS) 44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM51V4265E-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Access Time (Max.) Family tRAC 60ns 70ns tAA 30ns 35ns tCAC 15ns 20ns tOEA 15ns 20ns Cycle Time (Min.) 104ns 124ns Power Dissipation Operating (Max.) 414mW 378mW Standby (Max.) 1.8mW MSM51V4265E 1/15 FEDD51V4265E-01 1 Semiconductor MSM51V4265E PIN CONFIGURATION (TOP VIEW) VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 VCC 6 DQ5 7 DQ6 8 DQ7 9 DQ8 10 NC 11 NC 12 WE 13 RAS 14 NC 15 A0 16 A1 17 A2 18 A3 19 VCC 20...