BSS 110
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 ...
BSS 110
SIPMOS ® Small-Signal
Transistor P channel Enhancement mode Logic Level
VGS(th) = -0.8...-2.0 V
Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D
VDS
-50 V
ID
-0.17 A
RDS(on)
10 Ω
Package TO-92
Ordering Code Q62702-S500 Q62702-S278 Q67000-S568
Tape and Reel Information E6288 E6296 E6325
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Continuous drain current
VGS ID
± 20 A -0.17
TA = 35 °C
DC drain current, pulsed
IDpuls
-0.68
TA = 25 °C
Power dissipation
Ptot
0.63
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 110
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
-50 -1.5 -0.1 -2 -1 5.3 -2
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-0.8
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -60 -0.1
µA
VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
-10
nA Ω 10
VGS = -20 V, VDS = 0 ...