D-MOS transistor. BSS110 Datasheet

BSS110 transistor. Datasheet pdf. Equivalent

Part BSS110
Description P-channel enhancement mode vertical D-MOS transistor
Feature DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Pro.
Manufacture NXP
Datasheet
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BSS110
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS110
P-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC07
1995 Apr 07
Philips Semiconductors



BSS110
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSS110
FEATURES
Low threshold voltage
Direct interface to C-MOS, TTL, etc.
High speed switching
No secondary breakdown.
APPLICATIONS
Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
handbook, halfpage
1
2
3
g
MAM144
d
s
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN SYMBOL
1s
2g
3d
DESCRIPTION
source
gate
drain
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSO
VGSth
ID
RDSon
Ptot
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
open drain
ID = 1 mA; VDS = VGS
ID = 170 mA; VGS = 10 V
up to Tamb = 25 °C
MIN.
0.8
MAX.
50
±20
2
170
10
830
UNIT
V
V
V
mA
mW
1995 Apr 07
2





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