DatasheetsPDF.com

BSS131 Dataheets PDF



Part Number BSS131
Manufacturers INFINEON
Logo INFINEON
Description SIPMOS Small-Signal-Transistor
Datasheet BSS131 DatasheetBSS131 Datasheet (PDF)

Type BSS131 SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 240 14 0.1 V Ω A SOT-23 Type BSS131 BSS131 Package SOT23 SOT23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Marking SRs SRs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.1 A, .

  BSS131   BSS131



Document
Type BSS131 SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 240 14 0.1 V Ω A SOT-23 Type BSS131 BSS131 Package SOT23 SOT23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Marking SRs SRs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C Value 0.11 0.09 0.4 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.36 -55 ... 150 55/150/56 W °C Rev. 2.0 page 1 2004-04-29 BSS131 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I D (off) V DS=0 V, I D=56 µA V DS=240 V, V GS=0 V, T j=25 °C V DS=240 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.09 A V GS=10 V, I D=0.1 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.08 A 240 0.8 1.4 1.8 0.01 µA V 0.06 9.07 7.7 0.13 5 10 20 14 S nA Ω Rev. 2.0 page 2 2004-04-29 BSS131 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=0.1 A, T j=25 °C V R=120 V, I F=0.1 A, di F/dt =100 A/µs 0.81 42.9 22.6 0.11 0.43 1.2 64.3 34 V ns nC A Q gs Q gd Qg V plateau V DD=192 V, I D=0.1 A, V GS=0 to 10 V 0.16 0.8 2.1 2.90 0.22 1.2 3.1 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=120 V, V GS=10 V, I D=0.1 A, R G=6 Ω V GS=0 V, V DS=25 V, f =1 MHz 58 7.3 2.8 3.3 3.1 13.7 64.5 77 10 4.2 5.0 4.6 20 97 ns pF Values typ. max. Unit Rev. 2.0 page 3 2004-04-29 BSS131 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.4 0.12 0.1 0.3 0.08 P tot [W] 0.2 I D [A] 0.06 0.04 0.1 0.02 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 100 limited by on-state resistance 30 µs 100 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 0.5 10-1 1 ms 102 0.2 10 ms Z thJA [K/W] 1000 I D [A] 0.1 100 ms 0.05 10-2 101 0.02 DC 0.01 10-3 1 10 100 100 single pulse 10-5 10-4 10-3 10-2 10-1 100 101 V DS [V] t p [s] Rev. 2.0 page 4 2004-04-29 BSS131 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.4 10 V 5V 3.9 V 7V 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 25 23 21 2.3 V 2.7 V 3.3 V 3.9 V 0.3 19 R DS(on) [Ω ] 17 15 13 11 4.5 V 5V I D [A] 0.2 3.3 V 0.1 2.7 V 9 2.3 V 7V 10 V 7 5 0 0 1 2 3 4 5 6 7 0 0.1 0.2 0.3 0.4 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.3 0.4 0.25 0.3 0.2 g fs [S] 0 1 2 3 4 I D [A] 0.15 0.2 0.1 0.1 0.05 0 0 0.0 0.1 0.2 0.3 0.4 V GS [V] I D [A] Rev. 2.0 page 5 2004-04-29 BSS131 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=56 µA parameter: I D 50 2.4 40 2 98 % 1.6 R DS(on) [Ω ] 30 V GS(th) [V] 1.2 typ 20 98 % 0.8 2% 10 typ 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 100 150 °C 25 °C 150 °C, 98% 25 °C, 98% 102 Ciss 10-1 C [pF] 101 Coss I F [A] 10-2 Crss 100 0 10 20 30 10-3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V DS [V] V SD [V] Rev. 2.0 page 6 2004-04-29 BSS131 13 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD 12 300 290 280 270 8 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 120V 10 V GS [V] 48 V 192 V V BR(DSS) [V] 260 250 240 230 220 6 4 2 210 0 0 0.5 1 1.5 2 2.5 200 -60 -20 20 60 100 140 Q gate [nC] T j [°C] Rev. 2.0 page 7 2004-04-29 BSS131 Package Outline: Footprint: Packaging: Rev. 2.0 page 8 2004-04-29 BSS131 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße .


BSS135 BSS131 BSS131


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)