Document
Type
BSS131
SIPMOS® Small-Signal-Transistor
Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated
Product Summary V DS R DS(on),max ID 240 14 0.1 V Ω A
SOT-23
Type BSS131 BSS131
Package SOT23 SOT23
Ordering Code Q62702-S565 Q67000-S229
Tape and Reel Information E6327 E6433
Marking SRs SRs
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C Value 0.11 0.09 0.4 Unit A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
V GS
±20 Class 1
V
P tot T j, T stg
T A=25 °C
0.36 -55 ... 150 55/150/56
W °C
Rev. 2.0
page 1
2004-04-29
BSS131
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I D (off) V DS=0 V, I D=56 µA V DS=240 V, V GS=0 V, T j=25 °C V DS=240 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.09 A V GS=10 V, I D=0.1 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.08 A 240 0.8 1.4 1.8 0.01 µA V
0.06
9.07 7.7 0.13
5 10 20 14 S nA Ω
Rev. 2.0
page 2
2004-04-29
BSS131
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=0.1 A, T j=25 °C V R=120 V, I F=0.1 A, di F/dt =100 A/µs 0.81 42.9 22.6 0.11 0.43 1.2 64.3 34 V ns nC A Q gs Q gd Qg V plateau V DD=192 V, I D=0.1 A, V GS=0 to 10 V 0.16 0.8 2.1 2.90 0.22 1.2 3.1 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=120 V, V GS=10 V, I D=0.1 A, R G=6 Ω V GS=0 V, V DS=25 V, f =1 MHz 58 7.3 2.8 3.3 3.1 13.7 64.5 77 10 4.2 5.0 4.6 20 97 ns pF Values typ. max. Unit
Rev. 2.0
page 3
2004-04-29
BSS131
1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V
0.4
0.12
0.1 0.3 0.08
P tot [W]
0.2
I D [A]
0.06
0.04 0.1 0.02
0 0 40 80 120 160
0 0 40 80 120 160
T A [°C]
T A [°C]
3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p
100
limited by on-state resistance 30 µs 100 µs
4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T
103
0.5
10-1
1 ms
102
0.2
10 ms
Z thJA [K/W]
1000
I D [A]
0.1
100 ms
0.05
10-2
101
0.02 DC
0.01
10-3 1 10 100
100
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
V DS [V]
t p [s]
Rev. 2.0
page 4
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BSS131
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
0.4
10 V 5V 3.9 V 7V 4.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
25 23 21
2.3 V 2.7 V 3.3 V 3.9 V
0.3 19
R DS(on) [Ω ]
17 15 13 11
4.5 V 5V
I D [A]
0.2
3.3 V
0.1
2.7 V
9
2.3 V
7V 10 V
7 5
0 0 1 2 3 4 5 6 7
0
0.1
0.2
0.3
0.4
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
0.3 0.4 0.25
0.3
0.2
g fs [S]
0 1 2 3 4
I D [A]
0.15
0.2
0.1 0.1 0.05
0
0 0.0 0.1 0.2 0.3 0.4
V GS [V]
I D [A]
Rev. 2.0
page 5
2004-04-29
BSS131
9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=56 µA parameter: I D
50 2.4
40
2
98 %
1.6
R DS(on) [Ω ]
30
V GS(th) [V]
1.2
typ
20
98 %
0.8
2%
10
typ
0.4
0 -60 -20 20 60 100 140
0 -60 -20 20 60 100 140
T j [°C]
T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
100
150 °C 25 °C 150 °C, 98%
25 °C, 98%
102
Ciss
10-1
C [pF]
101
Coss
I F [A]
10-2
Crss
100 0 10 20 30
10-3 0 0.4 0.8 1.2 1.6 2 2.4 2.8
V DS [V]
V SD [V]
Rev. 2.0
page 6
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BSS131
13 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD
12 300 290 280 270 8
14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA
120V
10
V GS [V]
48 V
192 V
V BR(DSS) [V]
260 250 240 230 220
6
4
2 210 0 0 0.5 1 1.5 2 2.5 200 -60 -20 20 60 100 140
Q gate [nC]
T j [°C]
Rev. 2.0
page 7
2004-04-29
BSS131
Package Outline:
Footprint:
Packaging:
Rev. 2.0
page 8
2004-04-29
BSS131
Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße .