BSS 125
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V
Pin 1 G Type BSS 125 ...
BSS 125
SIPMOS ® Small-Signal
Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V
Pin 1 G Type BSS 125 Type BSS 125 BSS 125 BSS 125
Pin 2 D Marking SS125
Pin 3 S
VDS
600 V
ID
0.1 A
RDS(on)
45 Ω
Package TO-92
Ordering Code Q62702-S021 Q67000-S008 Q67000-S233
Tape and Reel Information E6288 E6296 E6325
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 600 600 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.1
TA = 35 °C
DC drain current, pulsed
IDpuls
0.4
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 125
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
600 2 10 8 10 30 2.5 100 50 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.5
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
nA µA nA Ω 45
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-st...
