BSS 124
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V
Pin 1 G Type BSS 124 ...
BSS 124
SIPMOS ® Small-Signal
Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V
Pin 1 G Type BSS 124 Type BSS 124
Pin 2 D Marking SS 124
Pin 3 S
VDS
400 V
ID
0.12 A
RDS(on)
28 Ω
Package TO-92
Ordering Code Q67000-S172
Tape and Reel Information E6288
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.12
TA = 37 °C
DC drain current, pulsed
IDpuls
0.48
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 124
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
400 2 0.1 8 10 16 2.5
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.5
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 50
µA
VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 28
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.12 A
Semicondu...