BSS296

BSS 296 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 G Type BSS 296 Type BSS 296 Pin 2 D Marking SS 296 Pin 3 S VDS 100 V ID 0.8 A RDS(on) 0.8 Ω Package TO-92 Ordering Code Q62702-S217 Tape and Reel Information E6296 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.8 TA = 25 °C DC drain current, pulsed IDpuls 3.2 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 296 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.4 0.1 8 10 0.5 0.6 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 0.8 1.4 VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Sou...