BSS169
SIPMOS® Small-Signal-Transistor
Features • N-channel • Depletion mode • dv /dt rated
Product Summary V DS R DS(...
BSS169
SIPMOS® Small-Signal-
Transistor
Features N-channel Depletion mode dv /dt rated
Product Summary V DS R DS(on),max I Dss,min 100 12 0.09 V Ω A
SOT-23
Type BSS169
Package SOT-23
Ordering Code Q67000-S322
Tape and Reel Information E6327: 3000 pcs/reel
Marking SFs
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.17 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Value 0.17 0.14 0.68 Unit A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
V GS
±20 Class 1
V
P tot T j, T stg
T A=25 °C
0.36 -55 ... 150 55/150/56
W °C
Rev. 1.0
page 1
2003-03-26
BSS169
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current V (BR)DSS V GS=-10 V, I D=250 µA V GS(th) I D(off) V DS=3 V, I D=50 µA V DS=100 V, V GS=-10 V, T j=25 °C V DS=100 V, V GS=-10 V, T j=125 °C Gate-source leakage current Saturated drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=0.05 A V GS=10 V, I D=0.17 A...