BSS 159
Preliminary data
SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance
Pin ...
BSS 159
Preliminary data
SIPMOS ® Small-Signal
Transistor N channel Depletion mode High dynamic resistance
Pin 1 G Type BSS 159
Pin 2 S
Pin 3 D
VDS
50 V
ID
0.16 A
RDS(on)
8Ω
Package SOT-23
Ordering Code Q67050-T6
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V
VDS VDGR VGS Vgs ID
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage, aperiodic Continuous drain current
± 14 ± 20
A 0.16
TA = 25 °C
DC drain current, pulsed
IDpuls
0.48
TA = 25 °C
Power dissipation
Ptot
0.36
W -55 ... + 150 °C -55 ... + 150
≤ 350 ≤ 285
TA = 25 °C
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate - reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA RthJSR
K/W
E 55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit
V
(BR)DSV
V 50 -2.5 200 10 4 -1.5 µA 1 mA 70 nA 100 Ω 8
VGS = -10 V, ID = 250 µA
Gate threshold voltage
VGS(th)
-3
VDS = 3 V, ID = 10 µA
Drain-source cutoff current
IDSV
VDS = 50 V, VGS = -10 V, Tj = 25 °C VDS = 50 V, VGS = -10 V, Tj = 125 °C
On-state drain current
ID(on) IGSS RDS(on)
VGS = 0 V, VDS = 10 V
Gate-source leakage cu...