BSS145

BSS 145 SIPMOS ® Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.4 ...2.3 V Pin 1 G Pin 2 S Pin 3 D Type BSS 145 Type BSS 145 VDS 65 V ID 0.22 A RDS(on) 3.5 Ω Package SOT-23 Marking SBs Ordering Code Q67000-S132 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 65 65 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.22 TA = 31 °C DC drain current, pulsed IDpuls 0.88 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 BSS 145 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0.1 8 10 1.6 2.3 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.4 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.5 50 µA VDS = 65 V, VGS = 0 V, Tj = 25 °C VDS = 65 V, VGS = 0 V, Tj = 125 °C Gate-source leakage ...