UPA880TS

PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC applications fT = 10 GHz TYP., S21e2 = 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 6-pin super lead-less minimold (1007 package) BUILT-IN TRANSISTORS Q1 3-pin super lead-less minimold part No. NESG2046M33 Q2 NESG2107M33 ORDERING INFORMATION Part Number Quantity 50 pcs (Non reel) 10 kpcs/reel 8 mm wide embossed taping Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Supplying Form µPA880TS µPA880TS-T3 Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10462EJ01V0DS (1st edition) Date Published January 2004 CP(K) Printed in Japan  NEC Compound Semiconductor Devices...