Document
Shantou Huashan Electronic Devices Co.,Ltd.
HC8050
█ NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg —— Storage Temperature ………………………… -55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 1W VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………25V V EB O —— Emitter-Base Voltage ……………………………… 6V I C —— Collector Current ……………………………………… 1.5A 1―Emitter,E 2―Collector, C 3―Base,B TO-92
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions
ICBO IEBO HFE VBE VCE(sat) VBE(sat) BVCBO BVCEO BVEBO fT
85 40
0.1 0.1 500 1 0.5 1.2
μA μA
40 25 6 100
V V V V V V MHz
VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100μA,IE=0 IC=2mA,IB=0 IE=100μA,IC=0 VCE=10V, IC=50mA
█ hFE Classification
B
C 120—200
D 160—300
E 270—500
85—160
Shantou Huashan Electronic Devices Co.,Ltd.
HC8050
.