28C64A Datasheet: High Speed CMOS 64K EEPROM





28C64A Datasheet PDF

Part Number 28C64A
Description High Speed CMOS 64K EEPROM
Manufacture Turbo IC
Total Page 4 Pages
PDF Download Download 28C64A Datasheet PDF

Features: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 6 4K ELECTRICALLY ERASABLE PROGRAMMABLE R OM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Inter nal Data and Address Latches for 64 Byt es • Fast Write Cycle Times Byte or P age Write Cycles: 10 ms Time to Rewrite Complete Memory: 1.25 sec Typical Byte Write Cycle Time: 160 µsec • Softwa re Data Protection • Low Power Dissip ation 50 mA Active Current 200 µA CMOS Standby Current • Direct Microproces sor End of Write Detection Data Polling • High Reliability CMOS Technology w ith Self Redundant EEPROM Cell Enduranc e: 100,000 Cycles Data Retention: 10 Ye ars • TTL and CMOS Compatible Inputs and Outputs • Single 5 V ± 10% Power Supply for Read and Programming l Oper ations • JEDEC Approved Byte-Write Pi nout A7 NC A12 A6 A5 A4 A3 A2 A1 A0 NC I/O0 VCC NC WE A8 A9 A11 NC OE A10 CE I /O7 I/O6 NC NC A12 5 4 3 2 1 32 31 3029 6 28 7 8 9 10 11 27 26 25 24 23 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O1 GND I/O3 I/O2 .

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28C64A datasheet
Turbo IC, Inc.
28C64A
HIGH SPEED CMOS
64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM
8K X 8 BIT EEPROM
FEATURES:
• 120 ns Access Time
• Automatic Page Write Operation
Internal Control Timer
Internal Data and Address Latches for 64 Bytes
• Fast Write Cycle Times
Byte or Page Write Cycles: 10 ms
Time to Rewrite Complete Memory: 1.25 sec
Typical Byte Write Cycle Time: 160 µsec
• Software Data Protection
• Low Power Dissipation
50 mA Active Current
200 µA CMOS Standby Current
• Direct Microprocessor End of Write Detection
Data Polling
• High Reliability CMOS Technology with Self Redundant
EEPROM Cell
Endurance: 100,000 Cycles
Data Retention: 10 Years
• TTL and CMOS Compatible Inputs and Outputs
• Single 5 V ± 10% Power Supply for Read and
Programming l Operations
• JEDEC Approved Byte-Write Pinout
DESCRIPTION:
The Turbo IC 28C64A is a 8K X 8 EEPROM fabricated with
Turbo’s proprietary, high reliability, high performance CMOS
technology. The 64K bits of memory are organized as 8K
by 8 bits.The device offers access time of 120 ns with power
dissipation below 250 mW.
The 28C64A has a 64-bytes page write operation enabling
the entire memory to be typically written in less than 1.25
seconds. During a write cycle, the address and 1 to 64 bytes
of data are internally latched, freeing the address and data
bus for other microprocessor operations.The programming
process is automatically controlled by the device using an
internal control timer. Data polling on one or all I/O can be
used to detect the end of a programming cycle. In addition,
the 28C64A includes an user-optional software data write
mode offering additional protection against unwanted (false)
write. The device utilizes an error protected self redundant
cell for extended data retention and endurance.
A7 NC VCC NC
A12 NC WE
A6 5 4 3 2 1 32 313029 A8
A5 6
28 A9
A4 7
27 A11
A3 8
26 NC
A2 9
25 OE
A1 10
24 A10
A0 11
23 CE
NC 12
22 I/O7
I/O0
13 21
14 15 16 17 18 19 20
I/O6
I/O1 GND I/O3 I/O5
I/O2 NC I/O4
32 pins PLCC
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O0 11
I/O1 12
I/O2 13
GND 14
28 VCC
27 WE
26 NC
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
28 pins PDIP
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O0 11
I/O1 12
I/O2 13
GND 14
OE 1
28 VCC A11
2
A9 3
27 WE A8
4
NC 5
26 NC WE
6
VCC 7
25 A8 NC
8
A12 9
24 A9
A7
10
A6 11
23 A11 A5
12
A4 13
22 OE A3
14
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
28 pins SOIC (SOG)
28 pins TSOP
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
PIN DESCRIPTION
ADDRESSES (A0 - A12)
The Addresses are used to select an 8 bits
memory location during a write or read opera-
tion.
OUTPUT ENABLE (OE)
The Output Enable input activates the output buff-
ers during the read operations.
CHIP ENABLES (CE)
The Chip Enable input must be low to enable all
read/write operation on the device. By setting CE
high, the device is disabled and the power con-
sumption is extremely low with the standby cur-
rent below 200 µA.
WRITE ENABLE (WE)
The Write Enable input initiates the writing of data
into the memory.
DATA INPUT/OUTPUT (I/O0-I/O7)
Data Input/Output pins are used to read data out
of the memory or to write Data into the memory.

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