SUB50N02-09. 50N02-09 Datasheet

50N02-09 SUB50N02-09. Datasheet pdf. Equivalent

Part 50N02-09
Description SUB50N02-09
Feature SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20.
Manufacture Vishay Siliconix
Datasheet
Download 50N02-09 Datasheet

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MO 50N02-09 Datasheet
Recommendation Recommendation Datasheet 50N02-09 Datasheet





50N02-09
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V
0.017 @ VGS = 4.5 V
www.DataSheet4U.com
TO-252
ID (A)a
20
15
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
D Desktop
Server
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC= 100_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
"20
20
14
100
4.3
29
42
6.5a
39.5
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
www.vishay.com
1



50N02-09
SUD50N02-09P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
www.DataSheet4DUra.cino-mSource On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
ID ^ 5V0DAD, =VG10ENV,=R1L0=V,0R.2gW= 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
Diode Forward Voltageb
ISM
VSD IF = 50 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
20
0.8 3.0 V
"100
nA
1
50 mA
50 A
0.008
0.0095
0.0135
0.014
0.017
W
15 S
1300
470
275
10.5
16
4.2
4.0
1.6 4.0
6
8 12
10 15
25 40
12 20
pF
nC
W
ns
100 A
1.2 1.5 V
35 70 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
VGS = 10 thru 6 V
80
5V
100
80
60
4V
40
60
40
20
0
0
www.vishay.com
2
3V
2468
VDS Drain-to-Source Voltage (V)
10
20
0
0
Transfer Characteristics
TC = 55_C
25_C
125_C
12345
VGS Gate-to-Source Voltage (V)
6
Document Number: 72034
S-41168—Rev. C, 14-Jun-04





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)