50N02-09 Datasheet: SUB50N02-09





50N02-09 Datasheet PDF

Part Number 50N02-09
Description SUB50N02-09
Manufacture Vishay Siliconix
Total Page 4 Pages
PDF Download Download 50N02-09 Datasheet PDF

Features: SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODU CT SUMMARY VDS (V) 20 rDS(on) (W) 0.00 95 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM O ptimized for High Efficiency 100% Rg Te sted APPLICATIONS D High-Side Synchron ous Buck DC/DC Conversion βˆ’ Desktop ⠈’ Server www.DataSheet4U.com D TO-25 2 Drain Connected to Tab G D S G Top View S N-Channel MOSFET Ordering Info rmation: SUD50N02-09P SUD50N02-09Pβ€”E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Para meter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulse d Drain Current Continuous Source Curre nt (Diode Conduction)a Avalanche Curren t Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction a nd Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TC = 25_C TA = 25_C TC= 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 "20 20 14 100 4.3 29 42 6.5a 39.5 βˆ’55 to 175 .

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50N02-09 datasheet
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V
0.017 @ VGS = 4.5 V
www.DataSheet4U.com
TO-252
ID (A)a
20
15
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
D βˆ’ Desktop
βˆ’ Server
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09Pβ€”E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC= 100_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
"20
20
14
100
4.3
29
42
6.5a
39.5
βˆ’55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72034
S-41168β€”Rev. C, 14-Jun-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
www.vishay.com
1

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