SUD50P04-09L

SUD50P04-09L New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) - 40 FEATURES ID (A)d - 50 - 50 rDS(on) (W) 0.0094 @ VGS = - 10 V 0.0145 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View Ordering Information: SUD50P04-09L D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit - 40 "20 - 50d - 50d - 100 - 50 125 136c 3b, c - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec J Junction-to-Ambient ti t A bi tb Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Steady State RthJA RthJC Symbol Typical 15 40 0.82 Maximum 18 50 1.1 Unit _C/W Document Number: 72243 S-31261—Rev. A, 16-Jun-03 www.vishay.com 1 SUD50P04-09L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = -...