SUD50N06-09L

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V TO-252 ID (A)a 50 50 FEATURES 175 °C Junction Temperature TrenchFET® Power MOSFET Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Drain Connected to Tab GDS Top View Ordering Information: SUD50N06-09L-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit ± 20 50 50a 100 50a 50 125 136 3b, 8.3b, c - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. t  10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit °C/W Document Number: 72004 For technical questions, contact: [email protected] www.vishay.com S13-0298-Rev. F, 11-Feb-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE...