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PSS9012 Dataheets PDF



Part Number PSS9012
Manufacturers NXP
Logo NXP
Description 20 V PNP general purpose transistors
Datasheet PSS9012 DatasheetPSS9012 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9012 series 20 V PNP general purpose transistors Product specification Supersedes data of 2003 May 15 2004 Aug 10 Philips Semiconductors Product specification 20 V PNP general purpose transistors FEATURES • High power dissipation: 710 mW • Low collector capacitance • Low collector-emitter saturation voltage • High current capability. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP general purpose transist.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9012 series 20 V PNP general purpose transistors Product specification Supersedes data of 2003 May 15 2004 Aug 10 Philips Semiconductors Product specification 20 V PNP general purpose transistors FEATURES • High power dissipation: 710 mW • Low collector capacitance • Low collector-emitter saturation voltage • High current capability. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP general purpose transistor in a SOT54 (TO-92) leaded plastic package. NPN complement: PSS9013 series. MARKING TYPE NUMBER PSS9012G PSS9012H MARKING CODE S9012G S9012H Fig.1 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 collector base emitter PSS9012 series PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. −20 −500 −1 UNIT V mA A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Simplified outline (SOT54; TO-92) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −20 −5 −500 −1 −100 710 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 2004 Aug 10 2 Philips Semiconductors Product specification 20 V PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 PSS9012 series VALUE 175 UNIT K/W 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain DC current gain PSS9012G PSS9012H VCEsat VBEsat VBEon Cc collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn on voltage collector capacitance IC = −100 mA; IB = −10 mA IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VCE = −1 V; IC = −100mA VCB = −6 V; IE = Ie = 0; f = 1 MHz CONDITIONS VCB = −35 V; IE = 0 VCB = −35 V; IE = 0; Tj = 150 °C VEB = −5 V; IC = 0 VCE = −1 V; IC = −500 mA VCE = −1 V; IC = −50 mA 112 144 − − − − − − − −60 −230 −1 −760 6 166 202 −250 −600 −1.2 −1000 − mV mV V mV pF − − − 40 MIN. − − − − TYP. MAX. −100 −50 −100 − UNIT nA µA nA 2004 Aug 10 3 Philips Semiconductors Product specification 20 V PNP general purpose transistors PSS9012 series 103 handbook, halfpage MLE084 handbook, halfpage −30 MLE085 (1) (2) fT (MHz) IC (mA) −20 (3) (4) 102 (5) −10 (6) (7) 10 −1 −10 −102 IC (mA) −103 0 0 Tamb = 25 °C. −4 −8 −12 −20 −16 VCE (V) (7) IB = −20 µA. VCE = −6 V. (1) IB = −140 µA. (2) IB = −120 µA. (3) IB = −100 µA. (4) IB = −80 µA. (5) IB = −60 µA. (6) IB = −40 µA. Fig.2 Transition frequency as a function of collector current; typical values. Fig.3 Collector current as a function of collector-emitter voltage; typical values. handbook, halfpage (1) 300 MLE082 handbook, halfpage (1) 300 MLE083 hFE hFE 200 (2) 200 (2) 100 (3) 100 (3) 0 −10−1 −1 −10 −102 IC (mA) −103 0 −10−1 −1 −10 −102 −103 IC (mA) VCE = −1 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 DC current gain as a function of collector current; typical values. 2004 Aug 10 4 Philips Semiconductors Product specification 20 V PNP general purpose transistors PSS9012 series −103 handbook, halfpage VCEsat (mV) −102 MLE080 −103 handbook, halfpage VCEsat (mV) −102 (1) (3) (2) MLE081 (1) −10 (3) (2) −10 −1 −10−1 −1 −10 −102 IC (mA) −103 −1 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 103 handbook, halfpage RCEsat (Ω) 102 MLE078 103 handbook, halfpage RCEsat (Ω) 102 MLE079 10 10 1 (2) (1) (3) 1 (2) (1) (3) 10−1 −10−1 IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −1 −10 −102 −103 IC (mA) 10−1 −10−1 IC/IB = 20. (1) Tamb = 25 °C. (2) Tamb = 100 °C. (3) Tamb = −55 °C. −1 −10 −102 −103 IC (mA) Fig.8 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Fig.9 Co.


D1990 PSS9012 TA2065F


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