Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PSS9012 series 20 V PNP general purpose transistors
Product specification Supersedes data of 2003 May 15 2004 Aug 10
Philips Semiconductors
Product specification
20 V PNP general purpose transistors
FEATURES • High power dissipation: 710 mW • Low collector capacitance • Low collector-emitter saturation voltage • High current capability. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP general purpose transistor in a SOT54 (TO-92) leaded plastic package. NPN complement: PSS9013 series. MARKING TYPE NUMBER PSS9012G PSS9012H MARKING CODE S9012G S9012H Fig.1 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 collector base emitter
PSS9012 series
PARAMETER collector-emitter voltage collector current (DC) peak collector current
MAX. −20 −500 −1
UNIT V mA A
DESCRIPTION
1 handbook, halfpage
2 3
1 2 3
MAM280
Simplified outline (SOT54; TO-92) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −20 −5 −500 −1 −100 710 +150 150 +150 V V V mA A mA mW °C °C °C UNIT
2004 Aug 10
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Philips Semiconductors
Product specification
20 V PNP general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1
PSS9012 series
VALUE 175
UNIT K/W
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain DC current gain PSS9012G PSS9012H VCEsat VBEsat VBEon Cc collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn on voltage collector capacitance IC = −100 mA; IB = −10 mA IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VCE = −1 V; IC = −100mA VCB = −6 V; IE = Ie = 0; f = 1 MHz CONDITIONS VCB = −35 V; IE = 0 VCB = −35 V; IE = 0; Tj = 150 °C VEB = −5 V; IC = 0 VCE = −1 V; IC = −500 mA VCE = −1 V; IC = −50 mA 112 144 − − − − − − − −60 −230 −1 −760 6 166 202 −250 −600 −1.2 −1000 − mV mV V mV pF − − − 40 MIN. − − − − TYP. MAX. −100 −50 −100 − UNIT nA µA nA
2004 Aug 10
3
Philips Semiconductors
Product specification
20 V PNP general purpose transistors
PSS9012 series
103 handbook, halfpage
MLE084
handbook, halfpage
−30
MLE085
(1) (2)
fT (MHz)
IC (mA) −20
(3)
(4)
102
(5)
−10
(6)
(7)
10 −1
−10
−102
IC (mA)
−103
0 0 Tamb = 25 °C.
−4
−8
−12
−20 −16 VCE (V) (7) IB = −20 µA.
VCE = −6 V.
(1) IB = −140 µA. (2) IB = −120 µA. (3) IB = −100 µA.
(4) IB = −80 µA. (5) IB = −60 µA. (6) IB = −40 µA.
Fig.2
Transition frequency as a function of collector current; typical values.
Fig.3
Collector current as a function of collector-emitter voltage; typical values.
handbook, halfpage
(1)
300
MLE082
handbook, halfpage
(1)
300
MLE083
hFE
hFE
200
(2)
200
(2)
100
(3)
100
(3)
0 −10−1
−1
−10
−102
IC (mA)
−103
0 −10−1
−1
−10
−102 −103 IC (mA)
VCE = −1 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
DC current gain as a function of collector current; typical values.
2004 Aug 10
4
Philips Semiconductors
Product specification
20 V PNP general purpose transistors
PSS9012 series
−103 handbook, halfpage VCEsat (mV) −102
MLE080
−103 handbook, halfpage VCEsat (mV) −102
(1) (3) (2)
MLE081
(1)
−10
(3) (2)
−10
−1 −10−1
−1
−10
−102
IC (mA)
−103
−1 −10−1
−1
−10
−102
IC (mA)
−103
IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.6
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.7
Collector-emitter saturation voltage as a function of collector current; typical values.
103 handbook, halfpage RCEsat (Ω) 102
MLE078
103 handbook, halfpage RCEsat (Ω) 102
MLE079
10
10
1
(2)
(1) (3)
1
(2)
(1) (3)
10−1 −10−1 IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
−1
−10
−102
−103 IC (mA)
10−1 −10−1 IC/IB = 20. (1) Tamb = 25 °C. (2) Tamb = 100 °C. (3) Tamb = −55 °C.
−1
−10
−102
−103 IC (mA)
Fig.8
Collector-emitter equivalent on-resistance as a function of collector current; typical values.
Fig.9
Co.