2N2221A Datasheet: (2n2222A) NPN Silicon Planar Switching Transistor





2N2221A (2n2222A) NPN Silicon Planar Switching Transistor Datasheet

Part Number 2N2221A
Description (2n2222A) NPN Silicon Planar Switching Transistor
Manufacture CDIL
Total Page 3 Pages
PDF Download Download 2N2221A Datasheet PDF

Features: Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN S ILICON PLANAR SWITCHING TRANSISTORS 2N 2221A 2N2222A TO-18 Switching And Line ar Application DC And VHF Amplifier App lications ABSOLUTE MAXIMUM RATINGS DESC RIPTION SYMBOL 2N2221A,22A UNIT V V V m A mW mW/deg C W mW/deg C deg C VCEO 40 Collector -Emitter Voltage VCBO 75 Col lector -Base Voltage VEBO 6.0 Emitter - Base Voltage IC 800 Collector Current C ontinuous PD 500 Power Dissipation @Ta= 25 degC 2.28 Derate Above 25deg C PD 1. 2 @ Tc=25 degC 6.85 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And St orage Junction Temperature Range ELECTR ICAL CHARACTERISTICS (Ta=25 deg C Unles s Otherwise Specified) DESCRIPTION Coll ector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector- Cut off Current SYMBOL TEST CONDITION V CEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA .IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 10 U.

Keywords: 2N2221A, datasheet, pdf, CDIL, 2n2222A, NPN, Silicon, Planar, Switching, Transistor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR SWITCHING TRANSISTORS
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
2N2221A
2N2222A
TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2221A,22A
Collector -Emitter Voltage
VCEO
40
Collector -Base Voltage
VCBO
75
Emitter -Base Voltage
VEBO
6.0
Collector Current Continuous
IC
800
Power Dissipation @Ta=25 degC
PD
500
Derate Above 25deg C
2.28
@ Tc=25 degC
PD
1.2
Derate Above 25deg C
6.85
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VALUE
MIN MAX
40 -
75 -
6.0 -
- 10
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=60V, IE=0
- 10
ICEX
VCE=60V, VEB=3V
-
10
IEBO
VEB=3V, IC=0
- 10
IBL
VCE=60V, VEB=3V
-
20
VCE(Sat)* IC=150mA,IB=15mA
-
0.3
IC=500mA,IB=50mA
1.0
VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2
IC=500mA,IB=50mA
-
2.0
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
UNIT
V
V
V
nA
uA
nA
nA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3

        






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)