MUN53xxDW1T1

MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. Features (3) R1 Q1 Q2 R2 (4) R1 (5) (6) http://onsemi.com (2) R2 (1) Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Pb−Free Package is Available 6 1 SOT−363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 6 XXd 1 XX = Specific Device Code d = Date Code = (See Page 2) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Diss...