TAN250A

TAN 250A 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 575 Watts 60 Volts 4.0 Volts 30 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960-1215 MHz Vcc = 50 Volts PW = 20 µsec DF = 5% F = 1090 MHz Ie = 20 mA Ic = 25 mA Ic = 1A, Vce = 5V See Chart MIN 250 60 6.0 7.0 40 5:1 TYP MAX UNITS Watts Watts dB % θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown C - Current Gain Thermal Resistance 4.0 60 10 Volts Volts o C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue B, July 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) D...