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STW8NA60 STH8NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 8NA60 STH8N...
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STW8NA60 STH8NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STW 8NA60 STH8NA60F I
V DSS 600 V 600 V
R DS(on) <1 Ω <1 Ω
ID 8 A 5 A
s s s s s s s
TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
2 1
3
TO-247 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Valu e ST W8NA60 V DS V DGR V GS ID ID I DM ( ) P tot V ISO Ts tg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH8NA60FI 600 600 ± 30 V V V 5 3.2 32 60 0.48 4000 A A A W W /o C V
o o
8 5.1 32 150 1.2 -65 to 150 150
C C
() Pulse width limited by safe operating area
October 1998
1/10
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STW8NA60-STH8NA60FI
THERMAL DATA
TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT 218 2.08
o o o
C/W C/W C/W o C
Thermal Resistance Junction-amb...