ATC18

Features 64K x 32-bit Flash Embedded Memory Cell Fast Read Access Time – Random Access Time: 70 ns Worst Case (Process, Voltage, Temperature) – Page Access Time: 40 ns Worst Case (Process, Voltage, Temperature) Single Supply Voltage: 1.8V ±10% Page Program Operation – 1024 Pages (64 Words/Page) – Internal Data Latches For 64 Words – Read Capability During Data Load Program Cycle Time: 4 ms per Page Including Auto-erase Full Chip Erase Available in 10 ms rdybsyn Signal For End of Program Detection Very Low Power Dissipation – 8 mA Active Current in Write and Erase – 4 mA Active Current in Random Read – 30 µA Stand-by Current High Reliability CMOS Technology – Typical Endurance: 100K Write/Word – Data Retention: 10 Years Erased State (Charged Gate) Is a Logic “1” Embedded ASIC Memory Cell ATC18 64K x 32-bit Low-power Flash Advance Information Description The 64K x 32-bit cell is an embedded 2-Mbit Flash electrically erasable and programmable read only memory with a power supply of 1.8V ±10%. The memory is organized as 1024 pages of 64 32-bit words each. The device uses the Atmel ATC18 0.18 µm silicon process. For easy reprogrammability, it does not require a high input voltage for programming: the embedded Flash can be operated with a single 1.8V ±10% power supply. Re-programming the cell is performed on a page basis: the words to be written (from a minimum of 1 word to a maximum of 64 words) are loaded into the device and then simultaneously written int...