M28F410. 28F410-100M1 Datasheet

28F410-100M1 M28F410. Datasheet pdf. Equivalent

Part 28F410-100M1
Description M28F410
Feature M28F410 M28F420 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY DUAL x8 and x16 ORGANIZATION SMALL.
Manufacture ETC
Datasheet
Download 28F410-100M1 Datasheet

M28F410 M28F420 4 Megabit (x8 or x16, Block Erase) FLASH ME 28F410-100M1 Datasheet
Recommendation Recommendation Datasheet 28F410-100M1 Datasheet





28F410-100M1
M28F410
M28F420
4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
DUAL x8 and x16 ORGANIZATION
SMALL SIZE PLASTIC PACKAGES TSOP56
and SO44
MEMORY ERASE in BLOCKS
– One 16K Byte or 8K Word Boot Block (top or
bottom location) with hardware write and
erase protection
– Two 8K Byte or 4K Word Key Parameter
Blocks
– One 96K Byte or 48K Word Main Block
– Three 128K Byte or 64K Word Main Blocks
5V ± 10% SUPPLY VOLTAGE
12V ± 5% PROGRAMMING VOLTAGE
100,000 PROGRAM/ERASE CYCLES
PROGRAM/ERASE CONTROLLER
AUTOMATIC STATIC MODE
LOW POWER CONSUMPTION
– 60μA Typical in Standby
– 0.2μA Typical in Deep Power Down
– 20/25mA Typical Operating Consumption
(Byte/Word)
HIGH SPEED ACCESS TIME: 70ns
EXTENDED TEMPERATURE RANGES
PRELIMINARY DATA
TSOP56 (N)
14 x 20mm
44
1
SO44 (M)
Figure 1. Logic Diagram
VCC VPP
Table 1. Signal Names
A0-A17
DQ0-DQ7
DQ8-
DQ14
DQ15A-1
E
G
W
BYTE
RP
VPP
VCC
Address Inputs
Data Input / Outputs
Data Input / Outputs
Data Input/Output or Address Input
Chip Enable
Output Enable
Write Enable
Byte/Word Organization
Reset/Power Down/Boot Block Unlock
Program & Erase Supply Voltage
Supply Voltage
18
A0-A17
RP
W
E
G
M28F410
M28F420
DQ15A-1
15
DQ0-DQ14
BYTE
VSS
AI01130C
March 1995
This is preliminary infor mationon a new product now in developmen t or undergoing evaluation. Details are subject to change without notice.
1/38



28F410-100M1
M28F410, M28F420
Figure 2A. TSOP Pin Connections
Figure 2B. SO Pin Connections
NC
NC
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
VPP
DU
NC
A17
A7
A6
A5
A4
A3
A2
A1
NC
1 56
14 M28F410 43
15
M28F420
(Normal)
42
28 29
NC
A16
BYTE
VSS
DQ15A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
NC
NC
AI01132C
Warning: NC = Not Connected, DU = Don’t Use
VPP
DU
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1 44
2 43
3 42
4 41
5 40
6 39
7 38
8 37
9 36
10 35
11 M28F410 34
12 M28F420 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
AI01133C
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
Warning: DU = Don’t Use
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
grade 1
grade 3
grade 6
0 to 70
–40 to 125
–40 to 85
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
VIO (2, 3)
Storage Temperature
Input or Output Voltages
–65 to 150
–0.6 to 7
°C
V
VCC
VA9 (2)
Supply Voltage
A9 Voltage
–0.6 to 7
–0.6 to 13.5
V
V
VPP (2)
Program Supply Voltage, during Erase
or Programming
–0.6 to 14
V
VRP (2)
RP Voltage
–0.6 to 13.5
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
3. Maximum DC voltage on I/O is VCC + 0.5V, overshoot to 7V allowed for less than 20ns.
2/38





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