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IRFP450 Dataheets PDF



Part Number IRFP450
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel Power MOSFET
Datasheet IRFP450 DatasheetIRFP450 Datasheet (PDF)

® IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID IRFP450 500 V < 0.4 Ω 14 A s TYPICAL RDS(on) = 0.33 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICAT.

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® IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID IRFP450 500 V < 0.4 Ω 14 A s TYPICAL RDS(on) = 0.33 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gat e-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM ( •) Ptot Drain Current (pulsed) Tot al Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area Value Uni t 500 V 500 V ± 20 V 14 A 8.7 A 56 A 190 W 1.5 W/oC 3.5 -65 to 150 150 (1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V/ ns oC oC August 1998 1/8 IRFP450 THERMAL DATA Rt hj-ca se Rth j -a m b Rthc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.66 30 0.1 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS S ymb ol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V) Max Valu e 14 800 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF S ymb ol V(BR)DSS IDSS IGSS P a ra m et er Test Conditions Dr ain- sou rc e Breakdown Voltage ID = 250 µA VGS = 0 Zero G ate Voltage VDS = Max Rating Drain Current (VGS = 0) VDS = Max Rating Tc = 125 oC Gate-body Leakage Current (VDS = 0) VGS = ± 20 V Min. 500 Typ. Max. 1 50 ± 100 Unit V µA µA nA ON (∗) S ymb ol V GS(th ) RDS( o n ) ID(o n) P a ra m et er Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10V ID = 8.4 A Resistance On St ate Drain Current VDS > ID(on) x RDS(on) max VGS = 10 V Min. 2 Typ . 3 Max. 4 Unit V 0.33 0.4 Ω 14 A DYNAMIC S ymb ol gfs (∗) Ciss Coss Crss P a ra m et er Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max ID = 8.4 A Min. 9.3 Typ . 13 Max. Unit S VDS = 25 V f = 1 MHz VGS = 0 2600 330 40 pF pF pF 2/8 IRFP450 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON S ymb ol td(on) tr P a ra m et er Turn-on Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDD = 250 V ID = 7A RG = 4.7 Ω VGS = 10 V (see test circuit, figure 1) VDD = 400 V ID = 14A VGS = 10 V Min. Typ . 24 14 75 13.5 27 Max. Unit ns ns nC nC nC SWITCHING OFF S ymb ol tr(Vo f f) tf tc P a ra m et er Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400 V ID = 14 A RG = 4.7 Ω VGS = 10 V (see test circuit, figure 3) Min. Typ . 15 25 35 Max. Unit ns ns ns SOURCE DRAIN DIODE S ymb ol P a ra m et er Test Conditions ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (∗) Forward On Voltage ISD = 14 A VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery ISD = 14 A di/dt = 100 A/µs VDD = 100 V Tj = 150 oC (see test circuit, figure 3) Charge IRRM Reverse Recovery Current (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Min. Typ . Max. 14 56 Unit A A 1.4 680 V ns 9 µC 26 A Safe Operating Area Thermal Impedance 3/8 IRFP450 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 Normalized Gate Threshold Voltage vs Temperature IRFP450 Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 IRFP450 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 IRFP450 DIM. A D E F F3 F4 G H L L3 L4 L5 M Dia MIN. 4.7 2.2 0.4 1 2 3 15.3 19.7 14.2 2 3.55 TO-247 MECHANICAL DATA mm TYP. 10.9 34.6 5.5 MAX. 5.3 2.6 0.8 1.4 2.4 3.4 15.9 20.3 14.8 3 3.65 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.602 0.776 0.559 0.079 0.140 inch TYP . 0.429 0.413 1.362 0.217 MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118 0.144 P025P 7/8 IRFP450 Information furnished is .


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