Document
® IRFP450
N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRFP450
500 V < 0.4 Ω
14 A
s TYPICAL RDS(on) = 0.33 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with
standard parts from various sources.
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gat e-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC
IDM ( •) Ptot
Drain Current (pulsed) Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Uni t
500 V
500 V
± 20
V
14 A
8.7 A
56 A
190 W 1.5 W/oC
3.5 -65 to 150
150
(1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns oC oC
August 1998
1/8
IRFP450
THERMAL DATA
Rt hj-ca se
Rth j -a m b
Rthc- si nk Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.66 30 0.1 300
oC/W
oC/W oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e 14
800
Unit A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
S ymb ol V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage Current (VDS = 0)
VGS = ± 20 V
Min. 500
Typ. Max.
1 50 ± 100
Unit V
µA µA nA
ON (∗)
S ymb ol V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 8.4 A Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max VGS = 10 V
Min. 2
Typ . 3
Max. 4
Unit V
0.33 0.4
Ω
14 A
DYNAMIC
S ymb ol gfs (∗)
Ciss Coss Crss
P a ra m et er
Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Test Conditions VDS > ID(on) x RDS(on)max ID = 8.4 A
Min. 9.3
Typ . 13
Max.
Unit S
VDS = 25 V f = 1 MHz VGS = 0
2600 330 40
pF pF pF
2/8
IRFP450
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S ymb ol
td(on) tr
P a ra m et er
Turn-on Time Rise Time
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V ID = 7A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 1)
VDD = 400 V ID = 14A VGS = 10 V
Min.
Typ . 24 14
75 13.5 27
Max.
Unit ns ns
nC nC nC
SWITCHING OFF
S ymb ol
tr(Vo f f) tf tc
P a ra m et er
Off-voltage Rise Time Fall Time Cross-over Time
Test Conditions
VDD = 400 V ID = 14 A RG = 4.7 Ω VGS = 10 V (see test circuit, figure 3)
Min.
Typ .
15 25 35
Max.
Unit
ns ns ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD ISDM (•)
Source-drain Current Source-drain Current (pulsed)
VSD (∗) Forward On Voltage
ISD = 14 A VGS = 0
trr Reverse Recovery Time
Qrr Reverse Recovery
ISD = 14 A di/dt = 100 A/µs VDD = 100 V Tj = 150 oC (see test circuit, figure 3)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Min.
Typ .
Max.
14 56
Unit
A A
1.4 680
V ns
9 µC
26 A
Safe Operating Area
Thermal Impedance
3/8
IRFP450
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
Normalized Gate Threshold Voltage vs Temperature
IRFP450
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
IRFP450
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
6/8
IRFP450
DIM.
A D E F F3 F4 G H L L3 L4 L5 M Dia
MIN. 4.7 2.2 0.4 1 2 3
15.3 19.7 14.2
2 3.55
TO-247 MECHANICAL DATA
mm TYP.
10.9
34.6 5.5
MAX. 5.3 2.6 0.8 1.4 2.4 3.4
15.9 20.3 14.8
3 3.65
MIN. 0.185 0.087 0.016 0.039 0.079 0.118
0.602 0.776 0.559
0.079 0.140
inch TYP .
0.429 0.413 1.362 0.217
MAX. 0.209 0.102 0.031 0.055 0.094 0.134
0.626 0.779 0.582
0.118 0.144
P025P 7/8
IRFP450
Information furnished is .