Document
PD-94011A
SMPS MOSFET
Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surface mounting Description
Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. This plated and leadformed version of the TO-247 package allows the package to be surface mounted in an application.
IRFP460AS
HEXFET® Power MOSFET
Rds(on) max
0.27Ω
ID
20A
SMD-247
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Mounting torqe, 6-32 or M3 screw Maximum Reflow Temperature
Max.
20 13 80 280 2.2 ± 30 3.8 -55 to + 150 10 lbf•in (1.1N•m) 230 (Time above 183 °C should not exceed 100s)
Units
A W W/°C V V/ns °C
°C
Typical SMPS Topologies: l Full Bridge l PFC Boost www.irf.com
Notes through
are on page 8
1
01/17/01
IRFP460AS
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.61 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.27 Ω VGS = 10V, ID = 12A 2.0 ––– 4.0 V VDS = VGS , ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 18 55 45 39 3100 480 18 4430 130 140 Max. Units Conditions ––– S VDS = 50V, ID = 12A 105 ID = 20A 26 nC VDS = 400V 42 VGS = 10V, See Fig. 6 and 13.