N-Channel Power MOSFET
IRFP460
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
IRFP460
500V < 0.27Ω 18.4A
...
Description
IRFP460
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
IRFP460
500V < 0.27Ω 18.4A
s TYPICAL RDS(on) = 0.22Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SWITH MODE LOW POWER SUPPLIES
(SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
May 2001
Value 500 500 ±30 18.4 11.6 73.6 220 1.75 3.5 –65 to 150 150
Unit V V V A A A W
W/°C V/ns °C °C
(1)ISD ≤18.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/8
IRFP460
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Res...
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