IRFP460

IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.22Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ()Pulse width limited by safe operating area May 2001 Value 500 500 ±30 18.4 11.6 73.6 220 1.75 3.5 –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C (1)ISD ≤18.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/8 IRFP460 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Res...