PN107

Phototransistors PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors PNZ107 4.6 0.15 Glass lens Unit : mm For optical control systems Features High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package 0. 15 0 1. 12.7 min. 6.3 0.3 2- 0.45 0.05 2.54 0.25 2 0. 45 0 3 1. 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * 5.75 max. Symbol VCEO VCBO * Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V mA mW 12.7 min. 6.3 0.3 1: Emitter 2: Collector PNZ108 4.6 0.15 Glass lens Unit : mm VECO VEBO* IC PC Topr Tstg V ˚C ˚C 3- 0.45 0.05 PNZ108 only 1. 0 2.54 0.25 0. 2 15 45 0 0. 3 1. 3 2 1 5.75 max. 1: Emitter 2: Base 3: Collector Note) The part numbers in the parenthesis show conventional part number. 1 Phototransistors PNZ107, PNZ108 Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf *2 Conditions VCE = 10V VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half powe...