PN108CL

Phototransistors PNZ108CL (PN108CL) Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 15 0. 1. 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 1. 0± 0. 15 Small size (low in height) package 0± 3˚ 45± Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C ø5.75 max. ø4.2±0.2 3 1 2 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) *3 Conditions VCE = 10V VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 lx*1 min 3.5 typ 0.05 6 900 80 5 6 0.3 max 2 Unit µA mA nm deg. µs µs 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT ...