Document
PHOTOCOUPLER
KB817-B
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES
FEATURES
1.Lead forming (gull wing) type, for surface mounting. 2.High isolation voltage between input and output (Viso=5000 Vrms). 3.Compact dual-in-line package KB817-B:1-channel type 4.Recognized by UL and CUL,file NO.E225308.
DESCRIPTION
1.The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2.The lead pitch is 2.54mm. 3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.
APPLICATIONS
1.Computer terminals. 2.Registers,copiers,automatic vending machines. 3.System appliances,measuring instruments. 4.Programmable logic controller. 5.Signal transmission between circuits of different potentials and impedances.
SPEC NO:DSAD1553 APPROVED: J.LU
REV NO: V.1 CHECKED: Tracy Deng
DATE:MAY/05/2003 DRAWN:Y.H.LI
PAGE: 1 OF 8
PHOTOCOUPLER
KB817-B
*PACKAGE DIMENSIONS (UNIT:mm)
Lead Bending Type
TOLERANCE : ± 0.5[ ± 0.02] UNLESS OTHERWISE NOTED.
KB817-B
Top View
2.54[0.1]Ó 0.25
6.50[0.256]
Anode mark
1
KB817-B
CTR rank mark
4
3
Internal connection diagram
4 3
2 0.90[0.035]Ó 0.2 . 1.20[0.047]Ó 0.3 .
1
2
3.50[0.138]
4.58[0.18]
0.25[0.01]
10.0[.3935] +0.0 -0.5 7.20[0.2835]
3.7[0.146]
0.96[0.038]
1.25[0495] . .
1. Anode 2. Cathode
3. Emitter
4. Collector
*Absolute Maximum Ratings (T==25°C)
Par am et er
Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Output Emitter-collector voltage Collector current Collector power dissipation Total power dissipation
*1
Sy m b o l
IF VR P VC E O VE C O IC PC Ptot Viso Topr Tstg Tsol
Rat in g
50 6 70 35 6 50 150 200 5000 -30~+100 -55~+125 260
Un it
mA V mW V V mA mW mW Vrms °C °C °C
Isolation voltage
Operating temperature Storage temperature
*2
Soldering temperature
*1 *2
40 to 60% RH,AC for 1 minute. For 10 seconds.
SPEC NO:DSAD1553 APPROVED: J.LU
REV NO: V.1 CHECKED: Tracy Deng
DATE:MAY/05/2003 DRAWN:Y.H.LI
PAGE: 2 OF 8
PHOTOCOUPLER
KB817-B
*Electro-optical Characteristics
Par am et er Forward voltage Input Peak forward voltage Reverse current Output Collector dark current
*1C urrent
Sy m b o l VF VFM IR ICEO CTR VCE(sat) fc
Co n d it io n s I F =20mA I F M=0.5A VR=4V VCE =20V,I F =0mA I F =5mA,VCE=5V I F =20mA, I C =1mA V CE=5 V, IC=2 mA RL=1 0 0 Ω , -3 d B V CE=2 V, IC=2 mA RL=1 0 0 Ω
Min . ___ ___ __ _ ___ 50 ___ ___ ___ ___
Ty p . 1.2 ___ ___ ___ ___ 0.1 80 4 3
Max . 1.4 3.0 10 10-7 60 0 0.2 ___ 18 18
Un it V V µA nA % 8 KHz µs µs
transfer ratio
Transfer characteristics
Collector-emitter saturation voltage C ut - o f f f r e q ue nc y Rise time Fall time
Response time
tr
tf
Classification table of current transfer ratio is shown below. Ic CTR= I F X 100%
Mo d el No . KB817L-B KB817A-B KB817B-B KB817C-B KB817D-B KB817AB-B KB817BC-B KB817CD-B KB817AC-B KB817BD-B KB817AD-B KB817-B
Ran k m ar k L A B C D A or B B or C C or .