MRF650

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz Built–In Matching Network for Broadband Operation Triple Ion Implanted for More Consistent Characteristics Implanted Emitter Ballast Resistors Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF650 50 W, 512 MHz RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value 16.5 38 4.0 12 135 0.77 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteri...