MRF6402

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6402/D NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has an internally matched input. To be used in Class AB for PCN and Cellular Radio Applications Specified 26 V, 1.88 GHz Characteristics Output Power — 4.5 Watts Gain — 10 dB Typ Efficiency — 45% Typ Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF6402 4.5 W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON CASE 319–07, STYLE 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCER VCBO VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Symbol Min Typ Value 40 45 3.5 0.7 15 0.2 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ω) Emitter–Base Breakdown Voltage (IE = 5 mAdc) Collector–Base Breakdown Voltage (...