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MRF630

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile App...


Advanced Semiconductor

MRF630

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Description
MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz. PACKAGE STYLE TO 205AD MILLIMETERS MIN MAX INCHES MIN MAX FEATURES: Grounded Emitter PG = 9.5 dB at 3.0 W/470 MHz Omnigold™ Metalization System DIM MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 16 V 36 V 4.0 V 8.75 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W A B C D E F G H J K L M P R 9.02 9.29 8.01 8.50 4.20 4.57 0.44 0.53 0.44 0.88 0.41 0.48 5.08 BSC 0.72 0.86 0.74 0.01 12.70 19.05 6.35 -45° BSC -1.27 2.54 -- 0.355 0.366 0.315 0.335 0.165 0.180 0.017 0.021 0.017 0.035 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.040 0.500 0.750 0.25 -45 °BSC -0.050 0.10 -- 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE COB PG ηC IC = 50 mA IC = 50 mA IE = 1.0 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V mA --- VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 3.0 W IC = 100 mA f = 1.0 MHz f = 470 MHz 9.5 20 8.0 10.8 55 12 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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