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MRF627

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF627 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF627 is Designed for Class C, FM Land Mobile and FM Base ...


Advanced Semiconductor

MRF627

File Download Download MRF627 Datasheet


Description
MRF627 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF627 is Designed for Class C, FM Land Mobile and FM Base Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL D FEATURES: Common Emitter PG = 13 dB at 0.5 W/470 MHz Omnigold™ Metalization System A C MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 0.4 A 28 V 12 V DIM MINIMUM inches / mm B F G H E MAXIMUM inches / mm 4.0 V 2.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 70 °C/W A B C D E F G H .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .106 / 2.700 .039 / 1.000 .004 / 0.100 .200 / 5.100 1.00 / 25.400 1.00 / 25.400 .031 / 0.800 .139 / 3.400 .047 / 1.200 .006 / 0.150 .208 / 5.300 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE Cob PG ηC IC = 25 mA IC = 10 mA IE = 5.0 mA VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 12 28 4.0 UNITS V V V IC = 150 mA f = 1.0 MHz POUT = 0.5 W f = 470 MHz 20 --4.0 --pF dB VCB = 12.5 V VCC = 12.5 V 13 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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