MRF616
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF616 is Designed for Common Emitter Class C Amplifier Applic...
MRF616
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The MRF616 is Designed for Common Emitter Class C Amplifier Applications in 12.5 Volt UHF Mobile Radios.
PACKAGE STYLE .280" 4L PILL
A
E C E B
FEATURES INCLUDE:
High Gain, 11 DB Typical Gold Metallization Emitter Ballasting
ØB
ØC
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG θJC
O O
D E F
250 mA 36 V
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W
O O O
O
A B C D E F
.220 / 5.59
.230 / 5.84 1.055 / 26.80
.275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00
.285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO hFE COB PG ηC IC = 5.0 mA IC = 50 mA IE = 1.0 mA VCE = 5.0 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 16 4.0
UNITS
V V V ---
IC = 150 mA f = 1.0 MHz POUT = 1.0 W f = 470 MHz
20 3.5 10 11 65
VCB = 12.5 V VCE = 12.5 V
pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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