MRF6P27160HR6

Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.6 dB Drain Efficiency — 22.6% ACPR @ 885 kHz Offset — - 47.8 dBc @ 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched, Controlled Q, for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P27160HR6 2700 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source ...