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POWER TRANSISTOR. MRF658 Datasheet

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POWER TRANSISTOR. MRF658 Datasheet






MRF658 TRANSISTOR. Datasheet pdf. Equivalent




MRF658 TRANSISTOR. Datasheet pdf. Equivalent





Part

MRF658

Description

RF POWER TRANSISTOR



Feature


MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by MRF6 58/D NPN Silicon RF Power Transistor D esigned for 12.5 Volt UHF large–signa l, common emitter, class–C amplifier applications in industrial and commerci al FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Charact eristics Output Power = 65 Watts Minimu m Gain = 4.15 dB Minimum.
Manufacture

Motorola

Datasheet
Download MRF658 Datasheet


Motorola MRF658

MRF658; Efficiency = 50% • Characterized with Series Equivalent Large–Signal Imped ance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadb and Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors fo r Improved Ruggedness • Silicon Nitri de Passivated • Capable of Surviving Load Mismatch Stress at all Phase .


Motorola MRF658

Angles with 20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive MRF658 65 W, 512 MHz RF POWER TRANSISTOR NPN SILICON CASE 316 –01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Ts.


Motorola MRF658

tg Value 16.5 38 4.0 15 175 1.0 – 65 t o +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Character istic Thermal Resistance, Junction to C ase Symbol RθJC Max 1.0 Unit °C/W EL ECTRICAL CHARACTERISTICS (TC = 25°C un less otherwise noted.) Characteristic S ymbol Min Typ Max Unit OFF CHARACTERIS TICS Collector–Emitter Breakdown Volt age (IC = 50 mAdc, IB = 0) .

Part

MRF658

Description

RF POWER TRANSISTOR



Feature


MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by MRF6 58/D NPN Silicon RF Power Transistor D esigned for 12.5 Volt UHF large–signa l, common emitter, class–C amplifier applications in industrial and commerci al FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Charact eristics Output Power = 65 Watts Minimu m Gain = 4.15 dB Minimum.
Manufacture

Motorola

Datasheet
Download MRF658 Datasheet




 MRF658
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier
applications in industrial and commercial FM equipment operating to 520 MHz.
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 65 Watts
Minimum Gain = 4.15 dB
Minimum Efficiency = 50%
Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
Built–In Matching Network for Broadband Operation
Triple Ion Implanted for More Consistent Characteristics
Implanted Emitter Ballast Resistors for Improved Ruggedness
Silicon Nitride Passivated
Capable of Surviving Load Mismatch Stress at all Phase Angles with
20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive
Order this document
by MRF658/D
MRF658
65 W, 512 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
16.5
38
4.0
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
CASE 316–01, STYLE 1
Value
16.5
38
4.0
15
175
1.0
– 65 to +150
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ Max Unit
29 — Vdc
45 — Vdc
4.6 — Vdc
0.1 10 mAdc
(continued)
MRF658
1




 MRF658
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE 40 85 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob — 170 220 pF
FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)
Output Power
(VCC = 12.5 Vdc, Pin = 25 W, f = 470 & 512 MHz)
Pout
65
W
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 65 W, f = 470 & 512 MHz)
η 50 60 — %
Output Mismatch Stress
(VCC = 15.5 Vdc, Pin = 32 W, f = 512 MHz, VSWR 20:1,
All Phase Angles)
ψ
No Degradation in Output Power
DELTA VRE PORT
(NORMALLY SHORTED)
C13 +
10 µF
B1
B2
C14
0.18 µF
C15
L1
C16 C17
SOCKET
B3
B4
C18
L2
C19
0.18 µF
12.5 Vdc
+ C20
10 µF
RF INPUT
N1
C3
C1
C2 C4
D.U.T.
C5 C7
C6 C8
L3
C12
C11
RF OUTPUT
N2
LOAD % = 50 OHMS
B1–B4 — Long Bead, Fair Rite (2743019446)
C1 — 56 pF, Chip Capacitor, Murata Erie
C2 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200
C3 — 39 pF, Chip Capacitor, Murata Erie
C4 — 1–20 pF Trimmer, Johanson–JMC 5501
C5 — 33 pF, Miniature Clamped Mica, SAHA
C6 — 33 pF, Miniature Clamped Mica, SAHA
C7 — 33 pF, Miniature Clamped Mica, SAHA
C8 — 27 pF, Miniature Clamped Mica, SAHA
C11 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200
C12 — 110 pF, Chip Capacitor, Murata Erie
C13 — 10 µF, 50 V Electrolytic, Panasonic–ECEV1HV100R
C14 — 0.18 µF Chip Capacitor
C15 — 130 pF, Chip Capacitor, Murata Erie
C16 — 130 pF, Chip Capacitor, Murata Erie
C17 — 130 pF, Chip Capacitor, Murata Erie
C18 — 130 pF, Chip Capacitor, Murata Erie
C19 — 0.18 µF Chip Capacitor
C20 — 10 µF, 50 V Electrolytic, Panasonic–ECEV1HV100R
Board — 1/16Glass Teflon, εr = 2.55, Keene (GX–0600–55–22)
L1, L2 — 5 Turns, 20 AWG, ID 0.126
L3 — 2 Turns, 26 AWG, ID 0.073
N1, N2 — Type N Flange, Omni Spectra (3052–1648–10)
Murata Erie Chip Capacitors —
GRH710COGxxxx100VBE
SAHA Mini Clamped Mica Capacitors — 3HS0006–xx
Figure 1. 512 MHz Test Circuit
MRF658
2
MOTOROLA RF DEVICE DATA




 MRF658
110
100
90
80
70
60
50
40
30
20
10
5
f = 440 MHz
470
512
VCC = 12.5 Vdc
10 15 20 25 30 35 40
PIN, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
100
90 PIN = 30 W
80 25 W
70 20 W
60 15 W
50
40 10 W
30
20 VCC = 12.5 Vdc
10
300 400 410 420 430 440 450 460 470 480 490 500 510 520 530
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency
120
110
100
90
80
70
60
50
40
30
20
10
7
f = 512 MHz
PIN = 35 W
8 9 10 11 12 13 14
VCC, SUPPLY VOLTAGE (VOLTS)
15
30 W
25 W
20 W
15 W
10 W
16 17
Figure 4. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF658
3



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