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MTB10010U Dataheets PDF



Part Number MTB10010U
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet MTB10010U DatasheetMTB10010U Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET MTB10010U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input prematching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good cha.

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DISCRETE SEMICONDUCTORS DATA SHEET MTB10010U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input prematching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good characteristics stability and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base class C narrowband pulsed power amplifiers at 1030 MHz for IFF applications. DESCRIPTION NPN silicon planar epitaxial microwave transistor with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange. 3 2 Top view Marking code: 10010U. MAM131 MTB10010U QUICK REFERENCE DATA Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF f CONDITIONS OPERATION (MHz) Class C tp = 1 µs; δ = 1% 1030 VCC (V) 24 PL (W) >9.5 GPO (dB) >9.5 ηC (%) >50 Zi/ZL (Ω) see Figs 5 and 6 PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b e Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 20 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (average) total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tmb < 75 °C; tp = 1 µs; δ = 1% CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − −65 − − MTB10010U MIN. MAX. 40 15 40 3 0.75 36 +200 200 235 UNIT V V V V A W °C °C °C MGA037 MGA038 handbook,50 halfpage handbook,12 halfpage Ptot (W) 40 PL (W) 8 30 20 4 10 0 –50 0 50 100 150 200 250 Tmb (oC) 0 0 0.5 1 1.5 Pi (W) 2 Ptot max = 36 W under the nominal pulse conditions. VCC = 24 V; tp = 1 µs; δ = 1%; f = 1030 MHz. Fig.2 Power derating curve. Fig.3 Load power as a function of input power. 1997 Feb 20 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Zth j-mb Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO PARAMETER collector cut-off current collector cut-off current emitter cut-off current CONDITIONS VCB = 30 V; IE = 0 VCE = 30 V; RBE = 0 VEB = 1.5 V; IC = 0 45 PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink thermal impedance from junction to mounting base CONDITIONS Tj = 100 °C note 1 tp = 1 µs; δ = 1%; note 1 MTB10010U MAX. 10.5 0.7 2.5 UNIT K/W K/W K/W MAX. µA µA µA 300 4.5 UNIT APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C and working in pulsed conditions in a narrowband test circuit as shown in Fig.4. MODE OF OPERATION Class C CONDITIONS tp = 1 µs; δ = 1 % f (MHz) 1030 24 VCC (V) PL (W) >9.5; typ. 11 Gpo (dB) >9.5; typ. 10 ηC (%) >50; typ. 55 Zi/ZL (Ω) see Figs 5 and 6 List of components (see Fig.4) COMPONENT L1 C1 C2 C3 C4 C5 C6 C7 DESCRIPTION 0.4 mm diameter copper wire tuning capacitor chip capacitor chip capacitor chip capacitor tantalum capacitor feedthrough bypass capacitor capacitor − 0.5 − 5 pF 3 pF 10 pF 47 pF 10 µF, 50 V − 220 µF, 63 V VALUE − − − − − − − DIMENSIONS rectangular loop − Tekelec 5855 Eurofarad CEC 23 Eurofarad CEC 23 Eurofarad CEC 23 − Erie 1250-003 − CATALOGUE NO. 1997 Feb 20 4 Philips Semiconductors Product specification NPN microwave power transistor MTB10010U handbook, full pagewidth 30 mm 30 mm 4.3 5 1.8 2 2 3 6.3 0.4 4 2.8 40 mm 0.6 2 2 7 2 2 5.6 2.8 3 12 2 1 7.5 3 0.6 6 40 mm MBC785 handbook, full pagewidth C7 VCC VCC C6 C5 L1 input C4 output C3 C1 C2 MBC786 Dimensions in mm. Substrate: Duroid 6010. Permittivity: εr = 10.2. Fig.4 Narrowband test circuit. 1997 Feb 20 5 Philips Semiconductors Product specification NPN microwave power transistor MTB10010U 1 handbook, full pagewidth 0.5 1090 MHz 1030 MHz 0.2 2 5 10 +j 0 – j 5 0.2 0.5 1 2 5 1.


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