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DISCRETE SEMICONDUCTORS
DATA SHEET
MTB10010U NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Input prematching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good characteristics stability and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base class C narrowband pulsed power amplifiers at 1030 MHz for IFF applications. DESCRIPTION NPN silicon planar epitaxial microwave transistor with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange.
3 2 Top view Marking code: 10010U.
MAM131
MTB10010U
QUICK REFERENCE DATA Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF f CONDITIONS OPERATION (MHz) Class C tp = 1 µs; δ = 1% 1030 VCC (V) 24 PL (W) >9.5 GPO (dB) >9.5 ηC (%) >50 Zi/ZL (Ω) see Figs 5 and 6
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
handbook, 4 columns
1 c
b
e
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (average) total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tmb < 75 °C; tp = 1 µs; δ = 1% CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − −65 − −
MTB10010U
MIN.
MAX. 40 15 40 3 0.75 36 +200 200 235
UNIT V V V V A W °C °C °C
MGA037
MGA038
handbook,50 halfpage
handbook,12 halfpage
Ptot (W) 40
PL (W)
8
30
20
4
10
0 –50
0
50
100
150
200 250 Tmb (oC)
0
0
0.5
1
1.5
Pi (W)
2
Ptot max = 36 W under the nominal pulse conditions.
VCC = 24 V; tp = 1 µs; δ = 1%; f = 1030 MHz.
Fig.2
Power derating curve.
Fig.3 Load power as a function of input power.
1997 Feb 20
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Zth j-mb Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO PARAMETER collector cut-off current collector cut-off current emitter cut-off current CONDITIONS VCB = 30 V; IE = 0 VCE = 30 V; RBE = 0 VEB = 1.5 V; IC = 0 45 PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink thermal impedance from junction to mounting base CONDITIONS Tj = 100 °C note 1 tp = 1 µs; δ = 1%; note 1
MTB10010U
MAX. 10.5 0.7 2.5
UNIT K/W K/W K/W
MAX. µA µA µA 300 4.5
UNIT
APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C and working in pulsed conditions in a narrowband test circuit as shown in Fig.4. MODE OF OPERATION Class C CONDITIONS tp = 1 µs; δ = 1 % f (MHz) 1030 24 VCC (V) PL (W) >9.5; typ. 11 Gpo (dB) >9.5; typ. 10 ηC (%) >50; typ. 55 Zi/ZL (Ω) see Figs 5 and 6
List of components (see Fig.4) COMPONENT L1 C1 C2 C3 C4 C5 C6 C7 DESCRIPTION 0.4 mm diameter copper wire tuning capacitor chip capacitor chip capacitor chip capacitor tantalum capacitor feedthrough bypass capacitor capacitor − 0.5 − 5 pF 3 pF 10 pF 47 pF 10 µF, 50 V − 220 µF, 63 V VALUE − − − − − − − DIMENSIONS rectangular loop − Tekelec 5855 Eurofarad CEC 23 Eurofarad CEC 23 Eurofarad CEC 23 − Erie 1250-003 − CATALOGUE NO.
1997 Feb 20
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
handbook, full pagewidth
30 mm
30 mm
4.3 5 1.8 2 2 3
6.3
0.4 4
2.8 40 mm 0.6 2 2 7 2 2 5.6 2.8
3
12 2 1 7.5 3 0.6
6 40 mm
MBC785
handbook, full pagewidth
C7 VCC
VCC
C6
C5 L1 input
C4 output C3
C1
C2
MBC786
Dimensions in mm. Substrate: Duroid 6010. Permittivity: εr = 10.2.
Fig.4 Narrowband test circuit.
1997 Feb 20
5
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
1
handbook, full pagewidth
0.5 1090 MHz 1030 MHz 0.2
2
5 10
+j 0 – j 5 0.2 0.5 1 2 5 1.