DatasheetsPDF.com

MTB2N60E Dataheets PDF



Part Number MTB2N60E
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET
Datasheet MTB2N60E DatasheetMTB2N60E Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. .

  MTB2N60E   MTB2N60E


Document
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 2.0 Apk, L = 95 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient — Junction to Ambient (1) TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHM ® D G CASE 418B–02, Style 2 D2PAK S Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 600 600 ± 20 ± 40 2.0 1.3 7.0 50 0.4 2.5 – 55 to 150 190 2.5 62.5 50 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W TJ, Tstg EAS RθJC RθJA RθJA TL Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. TMOS ©Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MTB2N60E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 480 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc) Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 50 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) (VDD = 300 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 18 Ω) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage Reverse Recovery Time INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. LD — LS — 7.5 — 3.5 — nH nH (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) VSD trr — 340 — — — 1.0 0.9 1.6 — Vdc ns — — — — — — — — 12 21 30 24 13 2.0 6.0 5.0 — — — — — — — — nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss — — — 435 100 20 — — — pF VGS(th) 2.0 — RDS(on) VDS(on) — — gFS 1.0 — — — 8.2 8.4 — mhos — 3.1 8.5 3.0 4.0 — 3.8 Vdc mV/°C Ohm Vdc V(BR)DSS 600 — IDSS — — IGSS — — — — 0.25 1.0 100 nAdc — 480 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit 2 Motorola TMOS Power MOSFET Transistor Device Data MTB2N60E TYPICAL ELECTRICAL CHARACTERISTICS 4 ID , DRAIN CURRENT (AMPS) TJ = 25°C VGS = 10 V 8 7V ID , DRAIN CURR.


MTB2P50E MTB2N60E MTB2N40E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)