MTB3N120E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N120E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM ® D G Avalanche Energy Capability Specified at Elevated Temperature S Low Stored Gate Charge for Efficient Switching Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode Source–to–Drain Diode Rec...