SD1528-08
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF, DME, ...
SD1528-08
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
. . . . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 WATTS (typ.) IFF 1030 - 1090 MHz 15 WATTS (min.) DME 1025 - 1150 MHz 15 WATTS (typ.) TACAN 960 - 1215 MHz 10 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE 20:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION
.250 SQ. 2LFL (M105) hermetically sealed ORDER CODE SD1528-08 BRANDING 1528-8
PIN CONNECTION
DESCRIPTION The SD1528-08 is a gold metallized, silicon
NPN power
transistor. The SD1528-08 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1528-08 is packaged in the .250” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 1.5 87.5 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
2.0
°C/W
1/4
SD1528-08
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCES BVEBO ICES
IC = 10mA IC = 25mA IE = 1mA VCE = 50V
IE = 0...
