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SD1565

ST Microelectronics

RF & MICROWAVE TRANSISTORS

SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . . 500 WATTS @ 250 µ Sec PULSE WIDTH, 10% DUTY CYCL...


ST Microelectronics

SD1565

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Description
SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . . 500 WATTS @ 250 µ Sec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION BALANCED CONFIGURATION .400 x .500 4LFL (M102) hermetically sealed ORDER CODE SD1565 BRANDING SD1565 PIN CONNECTION DESCRIPTION The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 43.2 1167 +200 − 65 to +200 V V V A W °C °C THERMAL DATA RTH(j-c) July 19, 1994 Junction-Case Thermal Resistance 0.15 °C/W 1/6 SD1565 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE I C = 50 mA I C = 50 mA I E = 10 mA VCE = 30 V VCE = 5 V IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 5 A 65 65 3.5 — 20 — — — — — — — — 15 200 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. ...




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