SD1565
RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
. . . . . .
500 WATTS @ 250 µ Sec PULSE WIDTH, 10% DUTY CYCL...
SD1565
RF & MICROWAVE
TRANSISTORS UHF PULSED APPLICATIONS
. . . . . .
500 WATTS @ 250 µ Sec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION BALANCED CONFIGURATION
.400 x .500 4LFL (M102) hermetically sealed ORDER CODE SD1565 BRANDING SD1565
PIN CONNECTION
DESCRIPTION The SD1565 is a hermetically sealed, gold metallized silicon
NPN pulse power
transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
VCBO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 43.2 1167 +200 − 65 to +200
V V V A W °C °C
THERMAL DATA RTH(j-c)
July 19, 1994
Junction-Case Thermal Resistance
0.15
°C/W
1/6
SD1565
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCES BVEBO ICES hFE
I C = 50 mA I C = 50 mA I E = 10 mA VCE = 30 V VCE = 5 V
IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 5 A
65 65 3.5 — 20
— — — — —
— — — 15 200
V V V mA —
DYNAMIC
Symbol Test Conditions Value Min. Typ. ...