SD1542-42
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS ...
SD1542-42
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
. . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION
.400 x .500 2LFL (M112) hermetically sealed ORDER CO DE SD1542-42 BRANDING SD1542-42
PIN CONNECTION
DESCRIPTION The SD1542-42 is a hermetically sealed, gold metallized, silicon
NPN power
transistor. The SD154242 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-42 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal resistance.
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Valu e Un it
VCC IC PDISS TJ T STG
Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature (TC ≤ 100°C)
55 45 1670 +200 − 65 to +200
V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.06 °C/W
* Applies only to rated RF operation.
June 14, 1995
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SD1542-42
ELECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC
Symbo l T est Co nditions Value Min . T yp. Max. Unit
BVCBO BVCER BVEBO ICES hFE
IC = 25 mA IC = 25 mA IE = 10 mA VCE = 50 V VCE = 5 V
IE = 0 mA RBE = 10 Ω IC = 0 mA VBE = 0 V IC = 2 A
65 65 3.5 — 1...
