SD1542-04
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS ...
SD1542-04
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
. . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030/1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION
.400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1542-04 BRANDING SD1542-4
PIN CONNECTION
DESCRIPTION The SD1542-04 is a hermetically sealed, gold metallized, silicon
NPN power
transistor. The SD154204 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal reistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
VCBO VCES VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 40 1350 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
0.06
°C/W
1/5
SD1542-04
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO ICES hFE
IC = 25mA IE = 10mA VCE = 50V VCE = 5V
IE = 0mA IC = 0mA IE = 0mA IC = 1A
65 3.5 — 5
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