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SD1538-02

ST Microelectronics

RF & MICROWAVE TRANSISTORS

SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, ...



SD1538-02

ST Microelectronics


Octopart Stock #: O-506704

Findchips Stock #: 506704-F

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Description
SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS (typ.) IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 SQ. 2LFL (M103) epoxy sealed ORDER CODE SD1538-02 BRANDING SD1538-2 PIN CONNECTION DESCRIPTION The SD1538-02 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1538-02 is packaged in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 11.0 583 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 0.30 °C/W 1/5 SD1538-02 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE DYNAMIC Symbol...




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