SD1534-08
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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DESIGNED FOR HIGH POWER PULSED IFF, DME, ...
SD1534-08
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
. . . . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 80 WATTS (typ.) IFF 1030 - 1090 MHz 75 WATTS (min.) DME 1025 - 1150 MHz 50 WATTS (typ.) TACAN 960 - 1215 MHz 8.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION
.250 SQ. 2LFL (M105) hermetically sealed ORDER CODE SD1534-08 BRANDING 1534-8
PIN CONNECTION
DESCRIPTION The SD1534-08 is a gold metallized silicon,
NPN power
transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1534-08 is packaged in the .280” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 5.5 218.7 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
November 1992
0.8
°C/W
1/3
SD1534-08
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCES BVEBO ICES hFE
IC = 10mA IC = 25mA IE =...
