UF2805B

an AMP company RF MOSFET Power 100 - 500 MHz Features l l l Transistor, 5W, 28V UF2805B A B E v2.00 N-Channel Enhancement DUOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband 0 Common Source Configuration l l 100 MHz to 500 MHz Operation .* 9 Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C RF MOSFET Power Transistor, 5W, 28V UF2805B v2.00 Typical Broadband Performance Curves CAPACITANCES 7 vs VOLTAGE POWER OUTPUT P,,=O.3 W I,,=50 a7 vs VOLTAGE mA F&O0 MHz 1 F=l .O MHz 5 10 15 v,, (W 20 25 30 5 10 15 20 v,, (V) 25 30 35 GAIN vs FREQUENCY V,,=28 V Po,+O EFFICIENCY vs FREQUENCY W W I,,=50 mA V,,=28 V I,,=50 mA P,,=5.0 xi= w 0 :: ii 50 - 100 200 500 loo 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT 7 vs POWER INPUT V,,=28 V I,,=50 mA Y 0.025 0.05 0.1 0.15 0.2 0.25 0.3 POWER INPUT(W) RF MOSFET Power Transistor, 5W, 28V U F2805B Typical Device impedance Frequency 100 300 500 (MHz) z;, (OHMS) 15.0 - j 80.0 8.0 - j 43.0 4.0 - j 29.0 v,,=28 V, I,=50 mA, PouT=5.0 Watts Z LOAD (OHMS) 35.0 29.0 28.0 + j 55.0 + j 40.0 + j 29.0 d Z,, is the series equivalent input impedance of the device from gate to source. as measured from drain to drain. Z LoAD i&the optimum series equivalent load impedance RF Test Fixture PARTS C8 c9 c4, to, 11 c2 c3 CS CQ 7, 13, 16 CL 12 Cl5 Cl4 LIST l.opf 3.9pf 4.7pf S&f 8.m 1Spf 68Dpf 82Opf .Oluf souf sov. 10K OHM UF...